US 12,295,188 B2
Infrared optical device
Hiromi Fujita, Tokyo (JP); Osamu Morohara, Tokyo (JP); and Daiki Yasuda, Tokyo (JP)
Assigned to Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed by Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed on Oct. 28, 2022, as Appl. No. 18/050,465.
Claims priority of application No. 2021-176916 (JP), filed on Oct. 28, 2021; and application No. 2022-137171 (JP), filed on Aug. 30, 2022.
Prior Publication US 2023/0134457 A1, May 4, 2023
Int. Cl. H01L 33/46 (2010.01); H10F 30/22 (2025.01); H10F 77/124 (2025.01); H10F 77/30 (2025.01); H10H 20/825 (2025.01); H10H 20/841 (2025.01)
CPC H10H 20/841 (2025.01) [H10F 30/22 (2025.01); H10F 77/12485 (2025.01); H10F 77/306 (2025.01); H10H 20/825 (2025.01)] 18 Claims
OG exemplary drawing
 
1. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength λ, the infrared optical device comprising:
a semiconductor substrate; and
a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order,
wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0≤Al+Ga≤0.5 and 0≤As≤1.0, and includes a plurality of layers that differ in impurity concentration, and
the center wavelength λ is 2.5 μm or more at room temperature.