US 12,295,187 B2
Semiconductor wafer, semiconductor device, and gas concentration measuring device
Kengo Sasayama, Tokyo (JP)
Assigned to Ashai Kasei Microdevices Corporation, Tokyo (JP)
Filed by Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed on May 31, 2024, as Appl. No. 18/679,941.
Application 18/679,941 is a continuation of application No. 17/198,476, filed on Mar. 11, 2021, granted, now 12,034,101.
Claims priority of application No. 2020-041973 (JP), filed on Mar. 11, 2020.
Prior Publication US 2024/0322085 A1, Sep. 26, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/00 (2010.01); G01N 21/3504 (2014.01); H10H 20/824 (2025.01); H10H 20/84 (2025.01)
CPC H10H 20/84 (2025.01) [G01N 21/3504 (2013.01); H10H 20/824 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor wafer comprising:
a wafer substrate;
a semiconductor stacked portion formed on a first surface of the wafer substrate, the semiconductor stacked portion being capable of one of emitting and receiving infrared light of 2 μm to 10 μm; and
an optical filter formed on a second surface of the wafer substrate that is opposite to the first surface of the wafer substrate,
wherein a thickness Twaf [μm] of the wafer substrate and a thickness Topt [μm] of the optical filter satisfy a relation of Topt≤0.000053×Twaf2.0488.