US 12,295,185 B2
Epitaxial substrate having a 2D material interposer, method for manufacturing the epitaxial substrate, and device prepared from the epitaxial substrate
Hsiao-Lei Wang, Taoyuan (TW); Neng-Tai Shih, New Taipei (TW); and Kao-Mei Sung, Taoyuan (TW)
Assigned to Hsiao-Lei Wang, Taoyuan (TW)
Filed by Hsiao-Lei Wang, Taoyuan (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/874,063.
Application 17/874,063 is a continuation in part of application No. 17/790,850, filed on Jul. 5, 2022.
Prior Publication US 2024/0038931 A1, Feb. 1, 2024
Int. Cl. H10H 20/825 (2025.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H10H 20/01 (2025.01); H10H 20/817 (2025.01)
CPC H10H 20/825 (2025.01) [H01S 5/3013 (2013.01); H01S 5/3203 (2013.01); H10H 20/01335 (2025.01); H10H 20/817 (2025.01)] 10 Claims
OG exemplary drawing
 
1. An aluminum nitride AlN, aluminum gallium nitride AlGaN, or gallium nitride GaN-based wide bandgap optoelectronic device, comprising:
an epitaxial substrate having a two-dimensional 2D material interposer, the epitaxial substrate extending along an epitaxial interface direction, comprising:
a polycrystalline base substrate having a superficial layer, a wafer bevel, and a back surface, wherein a difference in coefficient of thermal expansion between the polycrystalline base substrate and AlN or GaN is not greater than 1.5×10−6° C.−1 in a direction parallel to the epitaxial interface;
a multi-orientation 2D ultra-thin material interposer arranged on the superficial layer of the polycrystalline base substrate, wherein the multi-orientation 2D ultra-thin material interposer has a top layer, a lattice constant of the top layer being highly matched with that of AlN, AlGaN, or GaN; and
an AlN, AlGaN, or GaN-based epitaxial layer, which is epitaxially grown on a portion of the multi-orientation 2D ultra-thin material interposer distant from the polycrystalline base substrate, to serve as an active layer;
at least a pair of actuating electrodes which actuate the epitaxial substrate; and
an encapsulation layer which encapsulates the epitaxial substrate.