US 12,295,176 B2
Electromagnetic wave detector and electromagnetic wave detector assembly
Shimpei Ogawa, Tokyo (JP); Masaaki Shimatani, Tokyo (JP); Shoichiro Fukushima, Tokyo (JP); and Satoshi Okuda, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/919,323
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Mar. 10, 2021, PCT No. PCT/JP2021/009596
§ 371(c)(1), (2) Date Feb. 24, 2023,
PCT Pub. No. WO2021/256018, PCT Pub. Date Dec. 23, 2021.
Claims priority of application No. 2020-104531 (JP), filed on Jun. 17, 2020.
Prior Publication US 2023/0282759 A1, Sep. 7, 2023
Int. Cl. H10F 30/227 (2025.01); H10F 77/122 (2025.01); G01J 1/02 (2006.01)
CPC H10F 30/227 (2025.01) [H10F 77/122 (2025.01); G01J 1/0204 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An electromagnetic wave detector comprising:
a semiconductor layer;
a first insulating film arranged on the semiconductor layer, and provided with an opening;
a first electrode provided on the first insulating film;
a two-dimensional material layer including a first region electrically connected to the semiconductor layer in the opening and a second region to produce photo-gating effect, the second region being located between the first electrode and the opening, the second region being connected to the semiconductor layer with the first insulating film interposed between the second region and the semiconductor layer, the two-dimensional material layer extending from above the opening to the first insulating film and electrically connected to the first electrode;
a second electrode electrically connected to the semiconductor layer;
a second insulating film being in contact with the two-dimensional material layer, and
a control electrode connected to the two-dimensional material layer with the second insulating film interposed between the control electrode and the two-dimensional material layer.