US 12,295,169 B2
Display device and method of manufacturing the same
Keun Woo Kim, Yongin-si (KR); Hye Na Kwak, Yongin-si (KR); Doo Na Kim, Yongin-si (KR); Sang Sub Kim, Yongin-si (KR); and Bum Mo Sung, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Mar. 16, 2024, as Appl. No. 18/607,426.
Claims priority of application No. 10-2023-0043285 (KR), filed on Apr. 3, 2023.
Prior Publication US 2024/0332321 A1, Oct. 3, 2024
Int. Cl. H10D 86/01 (2025.01); G09G 3/3233 (2016.01); H10K 59/121 (2023.01)
CPC H10D 86/0221 (2025.01) [G09G 3/3233 (2013.01); H10K 59/1213 (2023.02); G09G 2300/0819 (2013.01); G09G 2300/0852 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A display device comprising:
a light emitting element disposed on a substrate;
a first transistor which controls a driving current flowing in the light emitting element;
a second transistor which supplies a data voltage to a gate electrode of the first transistor;
a first-third transistor and a second-third transistor connected to each other in series between the gate electrode of the first transistor and a drain electrode of the first transistor;
a first charge injection layer disposed on a semiconductor region of the first-third transistor to be adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor, wherein the semiconductor region of the first-third transistor is disposed between the first charge injection layer and the substrate; and
a second charge injection layer disposed on a semiconductor region of the second-third transistor to be adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor as a single unitary and indivisible part, wherein the semiconductor region of the second-third transistor is disposed between the second charge injection layer and the substrate,
wherein a charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.