US 12,295,167 B2
Diode and manufacturing method therefor
Kai Cheng, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/779,115
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Oct. 30, 2020, PCT No. PCT/CN2020/125419
§ 371(c)(1), (2) Date May 23, 2022,
PCT Pub. No. WO2021/139362, PCT Pub. Date Jul. 15, 2021.
Claims priority of application No. 202020055063.8 (CN), filed on Jan. 10, 2020.
Prior Publication US 2022/0406949 A1, Dec. 22, 2022
Int. Cl. H01L 23/31 (2006.01); H01L 21/02 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 8/60 (2025.01) [H01L 21/02241 (2013.01); H01L 23/3171 (2013.01); H10D 8/051 (2025.01); H10D 8/053 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A diode, comprising:
a nitride channel layer;
a nitride barrier layer, formed on the nitride channel layer;
an oxidation forming layer, wherein a part of the oxidation forming layer is positioned in the nitride barrier layer;
a passivation layer, formed on the nitride barrier layer, wherein the passivation layer comprises a first groove penetrating through the passivation layer to expose the oxidation forming layer and a part of the nitride barrier layer;
a first electrode, formed in the first groove, wherein the first electrode is in contact with the nitride barrier layer and the oxidation forming layer;
a second groove and a third groove, wherein the second groove and the third groove both penetrate through the passivation layer to the nitride barrier layer, and the first groove is positioned between the second groove and the third groove; and
a second electrode, formed in the second groove and the third groove.