| CPC H10D 62/109 (2025.01) [H01L 21/046 (2013.01); H10D 12/031 (2025.01); H10D 30/668 (2025.01); H10D 62/393 (2025.01); H10D 62/8325 (2025.01)] | 11 Claims |
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1. A silicon carbide semiconductor device comprising a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, the silicon carbide substrate including:
a drift region that is a first conductive type;
a body region that is a second conductive type different from the first conductive type, the body region being provided on the drift region;
a source region that is the first conductive type, the source region being provided on the body region to be separated from the drift region, and
a contact region that is the second conductive type, the contact region being provided on the body region,
wherein a gate trench is provided in the first main surface, the gate trench being defined by side surfaces and a bottom surface, the side surfaces penetrating the source region and the body region to reach the drift region, the bottom surface connecting to the side surfaces, and the gate trench extending in a first direction parallel to the first main surface,
the silicon carbide semiconductor device further comprising a source electrode connected to the source region and the contact region, the silicon carbide substrate further including:
an electric field relaxation region that is the second conductive type, the electric field relaxation region being provided between the bottom surface and the second main surface and extending in the first direction; and
a connection region that is the second conductive type, the connection region electrically connecting the contact region to the electric field relaxation region,
wherein, in a plan view in a direction normal to the first main surface, the gate trench and the electric field relaxation region are disposed on a virtual line that extends in the first direction, and the connection region is in contact with the electric field relaxation region on the virtual line.
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