US 12,295,157 B2
Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
Takuji Matsumoto, Kanagawa (JP)
Assigned to SONY CORPORATION, Tokyo (JP)
Filed by Sony Corporation, Tokyo (JP)
Filed on Oct. 4, 2021, as Appl. No. 17/493,392.
Application 17/493,392 is a division of application No. 15/136,091, filed on Apr. 22, 2016, abandoned.
Application 13/238,580 is a division of application No. 12/137,112, filed on Jun. 11, 2008, granted, now 8,039,901, issued on Oct. 18, 2011.
Application 15/136,091 is a continuation of application No. 14/662,351, filed on Mar. 19, 2015, granted, now 9,356,146, issued on May 31, 2016.
Application 14/662,351 is a continuation of application No. 13/913,012, filed on Jun. 7, 2013, granted, now 9,070,704, issued on Jun. 30, 2015.
Application 13/913,012 is a continuation of application No. 13/238,580, filed on Sep. 21, 2011, granted, now 8,486,793, issued on Jul. 16, 2013.
Claims priority of application No. 2007-169023 (JP), filed on Jun. 27, 2007.
Prior Publication US 2022/0029018 A1, Jan. 27, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01)
CPC H10D 30/797 (2025.01) [H10D 30/015 (2025.01); H10D 30/603 (2025.01); H10D 30/608 (2025.01); H10D 30/792 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01); H10D 64/021 (2025.01); H10D 64/259 (2025.01); H10D 64/62 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10D 30/0212 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A P-type MOS transistor comprising:
a substrate having a semiconductor layer with a distinct well diffusion region in the semiconductor layer, the well diffusion region being of a first conductivity type;
a gate electrode on the semiconductor layer;
a first source/drain at a first side of the gate electrode consisting of a first diffusion region in the well diffusion region, the first diffusion region being of a second conductivity type opposite the first conductivity type and having impurities in and at a first surface portion of the semiconductor layer;
an opposite-conductivity type diffusion region adjacent and abutting the first diffusion region and in a second surface portion of the semiconductor layer at the first side of the gate electrode, the first diffusion region being between the opposite-conductivity type diffusion region and the gate electrode, the opposite-conductivity type diffusion region being of the first conductivity type, the opposite-conductivity type diffusion region being a contact region to the well diffusion region;
an electrically conductive layer on the first source/drain region and the opposite-conductivity type diffusion region and electrically connecting together the first source/drain region and the opposite-conductivity type diffusion region;
a second source/drain at a second side of the gate electrode opposite the first side and consisting of an epitaxial region in a recess in the third surface portion of the semiconductor layer and a second diffusion region in the well diffusion region, the epitaxial region being laterally between the second diffusion region and the gate electrode in a channel length direction, the second diffusion region being, in the channel length direction, laterally adjacent to and abutting the epitaxial region and being of the second conductivity type; and
in cross-section, isolation films in respective trenches on opposite sides of the well diffusion region, the well diffusion region being laterally isolated by the isolation films, a first isolation film of the isolation films abutting the opposite-conductivity type diffusion region, a second isolation film of the isolation films abutting the second diffusion region.