US 12,295,154 B1
Wide bandgap semiconductor structure for irradiation characteristic test and preparation method thereof
Feng Zhou, Jiangsu (CN); Yu Rong, Jiangsu (CN); Hai Lu, Jiangsu (CN); Weizong Xu, Jiangsu (CN); Dong Zhou, Jiangsu (CN); and Fangfang Ren, Jiangsu (CN)
Assigned to NANJING UNIVERSITY, Nanjing (CN)
Filed by NANJING UNIVERSITY, Jiangsu (CN)
Filed on Dec. 30, 2024, as Appl. No. 19/004,515.
Claims priority of application No. 202410708841.1 (CN), filed on Jun. 3, 2024.
Int. Cl. H10D 30/47 (2025.01); H01L 21/66 (2006.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01); H10D 64/62 (2025.01)
CPC H10D 30/4755 (2025.01) [H01L 22/34 (2013.01); H10D 30/015 (2025.01); H10D 62/8503 (2025.01); H10D 64/62 (2025.01)] 7 Claims
OG exemplary drawing
 
1. A wide bandgap semiconductor structure for an irradiation characteristic test, comprising:
a substrate, where metal plates are disposed on the substrate at intervals; and
a wide bandgap semiconductor part, comprising a gallium nitride layer, a barrier layer, and P-type gallium nitride layers that are arranged in a stacked manner, wherein the P-type gallium nitride layers are located above an active region gallium nitride layer in a middle part of the gallium nitride layer, a gate metal layer is disposed on each P-type gallium nitride layer, two sides of the gate metal layer are provided with a source ohmic metal layer and a drain ohmic metal layer respectively, the source ohmic metal layer and the drain ohmic metal layer have different distances from the P-type gallium nitride layers, the source ohmic metal layer and the drain ohmic metal layer are connected to the active region gallium nitride layer, a gate pad is disposed on one side of the active region gallium nitride layer, the gate pad is connected to the gate metal layer through a metal lead wire, a gate interconnection metal layer and a gate top metal layer are disposed on the gate pad, a source interconnection metal layer and source top metal layers are disposed on the source ohmic metal layer, a drain interconnection metal layer and drain top metal layers are disposed on the drain ohmic metal layer, an isolating dielectric layer is deposited in gaps among the source top metal layers, the drain top metal layers, the gate top metal layer, and the gallium nitride layer, the wide bandgap semiconductor part is disposed above the substrate and is connected to the metal plates through the source top metal layers and the drain top metal layers, enabling the gallium nitride layer to be exposed above an entire structure.