US 12,295,152 B2
High ruggedness heterojunction bipolar transistor (HBT)
Chao-Hsing Huang, Taoyuan (TW); Yu-Chung Chin, Taoyuan (TW); and Kai-Yu Chen, Taoyuan (TW)
Assigned to VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan (TW)
Filed by VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan (TW)
Filed on Feb. 10, 2024, as Appl. No. 18/438,442.
Application 18/438,442 is a division of application No. 17/148,709, filed on Jan. 14, 2021, granted, now 11,929,427.
Claims priority of application No. 109101244 (TW), filed on Jan. 14, 2020.
Prior Publication US 2024/0222477 A1, Jul. 4, 2024
Int. Cl. H10D 10/80 (2025.01); H01L 23/66 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H10D 62/13 (2025.01); H10D 62/824 (2025.01)
CPC H10D 10/80 (2025.01) [H01L 23/66 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H10D 62/137 (2025.01); H10D 62/824 (2025.01); H01L 2223/6644 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A high ruggedness heterojunction bipolar transistor, comprising:
a substrate;
a sub-collector layer being on the substrate and comprising an N-type III-V semiconductor material;
a collector layer being on the sub-collector layer and comprising a III-V semiconductor material, wherein the collector layer comprises a wide bandgap layer that is directly or indirectly adjacent to the sub-collector layer, the wide bandgap layer comprises a material selected from the group consisting of InGaPN, InGaPSb, InGaPBi, InGaAsP, InGaAsPN, InGaAsPSb, InGaAsPBi, InAlGaP, InAlGaPN, InAlGaPSb, and InAlGaPBi, and a bandgap of the wide bandgap layer is greater than that of GaAs;
a base layer being on the collector layer and comprising a P-type III-V semiconductor material;
an emitter layer being on the base layer and comprising an N-type III-V semiconductor material; and
an InGaP layer, wherein the InGaP layer is formed above and/or below the wide bandgap layer, and the bandgap of the InGaP layer is greater than 1.86 eV, or a photoluminescence peak wavelength of the InGaP layer is less than 667 nm.