US 12,295,150 B2
Semiconductor device with ring-shaped electrode and method for preparing the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 27, 2022, as Appl. No. 17/849,768.
Prior Publication US 2023/0420488 A1, Dec. 28, 2023
Int. Cl. H10D 1/68 (2025.01)
CPC H10D 1/692 (2025.01) 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bottom electrode structure disposed over a semiconductor substrate, wherein the bottom electrode structure comprises:
a first bottom electrode layer; and
a second bottom electrode layer surrounding the first bottom electrode layer;
a plurality of insulating portions laterally separating the first bottom electrode layer and the second bottom electrode layer;
a top electrode disposed over and surrounded by the bottom electrode structure, wherein the top electrode has a ring shape from a top view;
an insulating layer separating the top electrode from the bottom electrode structure; and
a dielectric layer disposed between the bottom electrode structure and the semiconductor substrate, wherein the first bottom electrode layer and the second bottom electrode layer are in direct contact with the dielectric layer.