US 12,295,146 B2
Selection device and memory device using the same
Jea Gun Park, Seongnam-si (KR)
Assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
Appl. No. 17/416,618
Filed by IUCF-HYU (Industry-University Cooperation Foundation Hanyang University), Seoul (KR)
PCT Filed Nov. 7, 2019, PCT No. PCT/KR2019/015033
§ 371(c)(1), (2) Date Jun. 21, 2021,
PCT Pub. No. WO2020/130343, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 10-2018-0165693 (KR), filed on Dec. 19, 2018.
Prior Publication US 2022/0085104 A1, Mar. 17, 2022
Int. Cl. H01L 27/24 (2006.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01)
CPC H10B 63/20 (2023.02) [H10B 61/10 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A selection device, comprising:
a first electrode;
a second electrode disposed to face the first electrode;
a selector layer comprising at least three first selector layers and at least two second selector layers disposed between the first electrode and the second electrode and comprising a metal concentration profile; and
a diffusion barrier to prevent diffusion of a metal doped in the selector layer,
wherein the metal concentration profile comprises a metal concentration of a metal doped in the at least three first selector layers higher than a metal concentration of a metal doped in the at least two second selector layer,
wherein the diffusion barrier layer is disposed between the second electrode and the one of the at least three first selector layers, and is disposed between the one of the at least three first selector layers and the one of the at least two second selector layers, to separate the one of the at least three first selector layers from the one of the at least two second selector layers, and controls changes in the metal concentration profile that may occur during diffusion of the metal and maintains the metal concentration profile constant,
wherein the metal concentration for one of the at least three first selector layer adjacent to the first electrode is different from the one of the at least three first selector layer disposed between the first electrode and the second electrode, and
wherein the metal concentration for one of the at least two second selector layer adjacent to the first electrode is different from the one of the at least two second selector layer adjacent to the second electrode.