US 12,295,140 B2
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
Jordan D. Greenlee, Boise, ID (US); Allen McTeer, Eagle, ID (US); Rita J. Klein, Boise, ID (US); John D. Hopkins, Meridian, ID (US); Nancy M. Lomeli, Boise, ID (US); Xiao Li, Boise, ID (US); Alyssa N. Scarbrough, Boise, ID (US); Jiewei Chen, Meridian, ID (US); Naiming Liu, Meridian, ID (US); Shuangqiang Luo, Boise, ID (US); Silvia Borsari, Boise, ID (US); John Mark Meldrim, Boise, ID (US); and Shen Hu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 23, 2021, as Appl. No. 17/533,580.
Prior Publication US 2023/0164985 A1, May 25, 2023
Int. Cl. H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 41/27 (2023.02) [H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a stack comprising vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions and a through-array-via (TAV) region, the stack comprising channel-material strings extending through the first tiers and the second tiers in the memory-block regions, the stack comprising TAV openings in the TAV region;
forming a radially-outer insulative lining in individual of the TAV openings, the radially-outer insulative lining comprising a radially-inner insulative material extending elevationally along the first tiers and the second tiers and comprising a radially-outer insulative material, the radially-inner insulative material and the radially-outer insulative material being of different compositions relative one another;
forming a conductive core in the individual TAV openings elevationally along the vertically-alternating first tiers and second tiers radially-inward of the insulative lining to form a TAV in the individual TAV openings;
the radially-inner insulative material and the radially-outer insulative material at least predominantly comprise SiO2, the radially-inner insulative material comprises a dopant; and
the radially-outer insulative material has less, if any, of the dopant than the radially-inner insulative material, the dopant comprising at least one of boron, nitrogen, gallium, and metal material.