US 12,295,139 B2
Three-dimensional memory devices and methods for forming the same
Kun Zhang, Wuhan (CN); Wenxi Zhou, Wuhan (CN); and Zhiliang Xia, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jun. 18, 2021, as Appl. No. 17/352,244.
Application 17/352,244 is a continuation of application No. PCT/CN2021/082026, filed on Mar. 22, 2021.
Prior Publication US 2022/0302151 A1, Sep. 22, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC H10B 41/27 (2023.02) [H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a stack structure comprising conductive layers and dielectric layers that are interleaved stacked in a vertical direction;
a doped semiconductor layer; and
a channel structure extending through the stack structure and in contact with the doped semiconductor layer, the channel structure comprising a composite dielectric film and a semiconductor channel both extending along the vertical direction, wherein
the composite dielectric film comprises a gate dielectric portion and a memory portion in contact with each other and aligned along the vertical direction,
a part of the gate dielectric portion is located on a lateral side of one of the conductive layers that is closest to the doped semiconductor layer,
the memory portion of the composite dielectric film comprises a blocking layer, a storage layer, and a tunneling layer stacking along the lateral direction,
the gate dielectric portion of the composite dielectric film comprises a first gate dielectric layer, a second gate dielectric layer, and a third gate dielectric layer along the lateral direction,
the blocking layer and the first gate dielectric layer comprise a same dielectric material,
the tunneling layer and the third gate dielectric layer comprise a same dielectric material, and
the storage layer and the second gate dielectric layer comprise different dielectric materials.