US 12,295,136 B2
Integrated circuit semiconductor device
Intak Jeon, Seoul (KR); Hyukwoo Kwon, Seoul (KR); and Hanjin Lim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 20, 2022, as Appl. No. 17/844,623.
Claims priority of application No. 10-2021-0140490 (KR), filed on Oct. 20, 2021.
Prior Publication US 2023/0117391 A1, Apr. 20, 2023
Int. Cl. H10B 12/00 (2023.01); H01L 49/02 (2006.01)
CPC H10B 12/315 (2023.02) [H01L 28/90 (2013.01); H10B 12/033 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit semiconductor device comprising:
a lower electrode formed on a substrate extending in a first direction and a second direction perpendicular to the first direction;
an upper electrode facing the lower electrode; and
a support structure supporting the lower electrode,
wherein the support structure includes
a support pattern surrounding the lower electrode and extending in the first direction and the second direction, the support pattern having a first hole through which the lower electrode passes in a third direction perpendicular to the first direction and the second direction; and
a concavo-convex structure having at a surface of the support pattern a plurality of convex portions extending in the third direction, and a plurality of concave portions arranged between the convex portions,
wherein, in a cross-sectional view of the integrated circuit semiconductor device, the concavo-convex structure extends in the first direction.