US 12,294,039 B2
Optoelectronic component, semiconductor structure and method
Andreas Biebersdorf, Regensburg (DE); Stefan Illek, Donaustauf (DE); Felix Feix, Jena (DE); Christoph Klemp, Regensburg (DE); Ines Pietzonka, Donaustauf (DE); Petrus Sundgren, Lappersdorf (DE); Christian Berger, Marburg (DE); and Ana Kanevce, Stuttgart (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/753,957
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Mar. 26, 2020, PCT No. PCT/EP2020/058547
§ 371(c)(1), (2) Date Mar. 18, 2022,
PCT Pub. No. WO2021/052635, PCT Pub. Date Mar. 25, 2021.
Claims priority of application No. 10 2019 125 349.7 (DE), filed on Sep. 20, 2019; application No. 10 2019 127 425.7 (DE), filed on Oct. 11, 2019; and application No. PCT/EP2020/052191 (WO), filed on Jan. 29, 2020.
Prior Publication US 2022/0376134 A1, Nov. 24, 2022
Int. Cl. H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 33/0062 (2013.01); H01L 33/0095 (2013.01); H01L 33/30 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method of manufacturing an optoelectronic device, in particular a light-emitting diode, comprising:
providing a semiconductor structure comprising an n-doped layer, a p-doped layer, and an active layer disposed therebetween having at least one quantum well, wherein the p-doped layer comprises a first dopant;
depositing and patterning of a mask on the semiconductor structure; and
doping the p-doped layer with a second dopant, including Zn or Mg, so that quantum well intermixing is produced in regions of the active layer over which there is no region of patterned mask;
wherein the doping of the p-doped layer with the second dopant is performed by a gas phase diffusion using a precursor with the second dopant and comprises:
depositing the second dopant on a surface of the p-doped layer by decomposing the precursor at a first temperature selected such that substantially no diffusion of the second dopant occurs into the p-doped layer occurs; and
diffusing the deposited second dopant into the p-doped layer at a second temperature higher than the first temperature.