US 12,294,037 B2
Light-emitting diode chip and method for manufacturing the same
Gong Chen, Xiamen (CN); Su-Hui Lin, Xiamen (CN); Sheng-Hsien Hsu, Xiamen (CN); Kang-Wei Peng, Xiamen (CN); Ling-Yuan Hong, Xiamen (CN); Minyou He, Xiamen (CN); and Chia-Hung Chang, Xiamen (CN)
Assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan (CN)
Filed by XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN)
Filed on Oct. 12, 2021, as Appl. No. 17/450,630.
Application 17/450,630 is a continuation in part of application No. PCT/CN2019/082766, filed on Apr. 15, 2019.
Prior Publication US 2022/0029052 A1, Jan. 27, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/24 (2010.01)
CPC H01L 33/0095 (2013.01) [H01L 33/24 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A light-emitting diode chip, comprising:
a substrate which is made of sapphire, and which has a side surface configured as a serrated surface, said serrated surface comprising a plurality of laser inscribed features disposed along a thickness direction of said substrate and spaced apart from each other,
wherein said laser inscribed features are formed on a r-plane of a unit cell of said substrate.