| CPC H01L 31/186 (2013.01) [B23K 26/364 (2015.10); B23K 26/40 (2013.01); B28D 5/04 (2013.01); H01L 31/035281 (2013.01); H01L 31/042 (2013.01); B23K 2101/40 (2018.08)] | 19 Claims |

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1. A method for manufacturing a monocrystalline silicon wafer, comprising:
providing a monocrystalline silicon rod;
squaring the monocrystalline silicon rod to form a quasi-square silicon rod with a quasi-square cross-section having at least one arc, a length of each of the at least one arc being not less than 15 mm;
slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer each having the at least one arc; and
scribing the at least one quasi-square silicon wafer to obtain a square-shaped sub-wafer and at least one strip-shaped sub-wafer, a number of the at least one strip-shaped sub-wafer being equal to a number of the at least one arc of the at least one quasi-square silicon wafer.
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