US 12,294,035 B2
Heterostructure optoelectronic device for emitting and detecting electromagnetic radiation, and manufacturing process thereof
Massimo Cataldo Mazzillo, Corato (IT); Valeria Cinnera Martino, Valverde (IT); and Antonella Sciuto, S. Giovanni la Punta (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Jun. 24, 2021, as Appl. No. 17/357,653.
Application 17/357,653 is a continuation of application No. 16/535,026, filed on Aug. 7, 2019, granted, now 11,049,990.
Claims priority of application No. 102018000007970 (IT), filed on Aug. 8, 2018.
Prior Publication US 2021/0320219 A1, Oct. 14, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/12 (2006.01); H01L 31/0376 (2006.01); H01L 31/107 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/34 (2010.01)
CPC H01L 31/12 (2013.01) [H01L 31/03762 (2013.01); H01L 31/107 (2013.01); H01L 31/1848 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/325 (2013.01); H01L 33/34 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a semiconductor body;
a first cathode structure that includes a first semiconductor material of the semiconductor body and has a first type of conductivity;
a buffer region on the first cathode structure and including a second semiconductor material of the semiconductor body that is different from the first semiconductor material;
a receiver including a receiver anode region in the first semiconductor material, having a second type of conductivity, and extending in the first cathode structure; and
an emitter on the buffer region and including a semiconductor junction, the semiconductor junction including:
a second cathode structure on the buffer region; and
an emitter anode structure disposed on the second cathode structure.