US 12,294,032 B2
Segmented Schottky diode
Zachary K. Lee, Fremont, CA (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Jan. 5, 2024, as Appl. No. 18/405,053.
Application 18/405,053 is a division of application No. 17/137,590, filed on Dec. 30, 2020, granted, now 11,916,152.
Prior Publication US 2024/0145602 A1, May 2, 2024
Int. Cl. H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/47 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 29/0619 (2013.01); H01L 29/47 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor layer over a substrate; and
a diode, including:
a guard ring in the semiconductor layer, the guard ring having a first conductivity type, the guard ring including a first guard ring segment and a second guard ring segment;
a barrier region in the semiconductor layer, the barrier region having a second conductivity type, opposite from the first conductivity type, the barrier region extending between and touching the first guard ring segment and the second guard ring segment;
a well region having the second conductivity type surrounded by the guard ring;
a drift region having the second conductivity type in the semiconductor layer and extending from the barrier region toward the well region; and
a metal containing layer forming a Schottky barrier with the barrier region.