US 12,294,030 B2
Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
Shih-Hao Lin, Hsinchu (TW); Chih-Hsuan Chen, Hsinchu (TW); Chia-Hao Pao, Kaohsiung (TW); Chih-Chuan Yang, Hsinchu (TW); Chih-Yu Hsu, Hsinchu County (TW); Hsin-Wen Su, Hsinchu (TW); and Chia-Wei Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on May 24, 2024, as Appl. No. 18/673,746.
Application 18/673,746 is a continuation of application No. 17/319,695, filed on May 13, 2021, granted, now 11,996,484.
Prior Publication US 2024/0313119 A1, Sep. 19, 2024
Int. Cl. H01L 29/786 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78621 (2013.01) [H01L 21/823814 (2013.01); H01L 27/092 (2013.01); H01L 29/167 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H01L 29/0665 (2013.01); H01L 29/456 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first pair of source/drain features;
a first stack of channel layers connected to the first pair of source/drain features;
a second pair of source/drain features; and
a second stack of channel layers connected to the second pair of source/drain features,
wherein the first pair of source/drain features each include a first epitaxial layer doped with a first dopant, a second epitaxial layer doped with a second dopant and disposed over the first epitaxial layer and connected to the first stack of channel layers, and a third epitaxial layer doped with a third dopant and disposed over the second epitaxial layer,
wherein the second pair of source/drain features each include a fourth epitaxial layer doped with a fourth dopant and connected to the second stack of channel layers, and a fifth epitaxial layer doped with a fifth dopant and disposed over the fourth epitaxial layer, and
wherein the first dopant, the second dopant, the third dopant, and the fourth dopant are of different species.