US 12,294,029 B2
Doped polar layers and semiconductor device incorporating same
Ramesh Ramamoorthy, Moraga, CA (US); Sasikanth Manipatruni, Portland, OR (US); and Gaurav Thareja, Santa Clara, CA (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Jul. 26, 2022, as Appl. No. 17/815,100.
Application 17/815,100 is a continuation of application No. 16/842,571, filed on Apr. 7, 2020, granted, now 11,444,203.
Claims priority of provisional application 62/831,044, filed on Apr. 8, 2019.
Prior Publication US 2023/0155029 A1, May 18, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/74 (2006.01); H01L 49/02 (2006.01); H10B 53/30 (2023.01); H10B 12/00 (2023.01)
CPC H01L 29/78618 (2013.01) [H01L 28/56 (2013.01); H01L 28/57 (2013.01); H01L 28/60 (2013.01); H01L 28/65 (2013.01); H01L 29/2003 (2013.01); H01L 29/6684 (2013.01); H01L 29/7375 (2013.01); H01L 29/7408 (2013.01); H01L 29/7869 (2013.01); H10B 53/30 (2023.02); H10B 12/312 (2023.02); H10B 12/36 (2023.02)] 24 Claims
OG exemplary drawing
 
1. A capacitor, comprising:
a crystalline polar layer comprising a base ferroelectric material substitutionally doped with a dopant comprising a metal element of one of 4d series, 5d series, 4f series, or 5f series such that the crystalline polar layer comprises a ferroelectric oxide selected from the group consisting of Pb(Mg,Nb)O3, Pb(Mg,Nb)O3—PbTiO3, Pb(Sc,Nb)O3, BaTiO3—Bi(Zn(Nb,Ta))O3, BaTiO3—BaSrTiO3, Bi1-xLaxFeO3, Bi1-xCexFeO3 and BiFe1-yCoyO3;
wherein a ferroelectric switching voltage of the capacitor is lower than that of a reference capacitor that is the same as the capacitor except for the base ferroelectric material being doped with the dopant, wherein the dopant is present at a concentration greater than 0 percent and less than 25 percent such that the ferroelectric switching voltage is less than about 1200 mV.