US 12,294,028 B2
Manufacturing method of semiconductor device
Jiun-Ming Kuo, Taipei (TW); Hsin-Chih Chen, New Taipei (TW); Che-Yuan Hsu, Hsinchu (TW); Kuo-Chin Liu, Hualien County (TW); Han-Yu Tsai, Hsinchu (TW); You-Ting Lin, Miaoli County (TW); and Jen-Hong Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 25, 2023, as Appl. No. 18/494,759.
Application 18/494,759 is a division of application No. 17/019,366, filed on Sep. 14, 2020, granted, now 11,830,948.
Claims priority of provisional application 62/978,307, filed on Feb. 19, 2020.
Prior Publication US 2024/0055527 A1, Feb. 15, 2024
Int. Cl. H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7853 (2013.01) [H01L 21/3065 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming a plurality of openings in a substrate;
reacting a gas with a material of the substrate, to form a plurality of polymer layers on exposed surfaces of the openings;
performing an anisotropic etch process on the openings with the polymer layers thereon, to simultaneously remove the polymer layers on sidewalls of the openings and portions of the substrate to deepen a depth of the openings and form a protrusion between the openings; and
forming a recess on a sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.