US 12,294,025 B2
Semiconductor apparatus and manufacturing method of semiconductor apparatus
Motoyoshi Kubouchi, Matsumoto (JP); and Takashi Yoshimura, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed on Dec. 26, 2021, as Appl. No. 17/645,992.
Application 17/645,992 is a continuation of application No. PCT/JP2021/001135, filed on Jan. 14, 2021.
Claims priority of application No. 2020-006033 (JP), filed on Jan. 17, 2020.
Prior Publication US 2022/0123133 A1, Apr. 21, 2022
Int. Cl. H01L 29/739 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 29/861 (2006.01)
CPC H01L 29/7397 (2013.01) [H01L 21/26506 (2013.01); H01L 29/36 (2013.01); H01L 29/861 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor apparatus comprising:
a semiconductor substrate having an upper surface and a lower surface;
a first region provided in a region on an upper surface side of the semiconductor substrate and having a first chemical concentration peak of a first impurity at a first depth position; and
a second region provided in a region different from the first region in the semiconductor substrate and having a second chemical concentration peak of the first impurity at the first depth position,
wherein, at the first depth position, a concentration of a recombination center of the second region is lower than a concentration of the recombination centers of the first region.