US 12,294,020 B2
Semiconductor device
Takafumi Deguchi, Nomi Ishikawa (JP); and Kouta Tomita, Nonoichi Ishikawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Aug. 5, 2022, as Appl. No. 17/882,335.
Claims priority of application No. 2022-045859 (JP), filed on Mar. 22, 2022.
Prior Publication US 2023/0307511 A1, Sep. 28, 2023
Int. Cl. H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/407 (2013.01) [H01L 29/401 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/4916 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a first semiconductor region located on the first electrode and electrically connected with the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
a first conductive part located in the first semiconductor region with a first insulating part interposed, the first conductive part including an impurity of the second conductivity type;
a first gate electrode located on the first conductive part with a first inter-layer insulating part interposed, the first gate electrode including an impurity of the first conductivity type and facing the second semiconductor region via a first gate insulating layer in a second direction perpendicular to a first direction, the first direction being from the first electrode toward the first semiconductor region; and
a second electrode located on the second and third semiconductor regions and electrically connected with the second semiconductor region, the third semiconductor region, and the first conductive part,
a first-conductivity-type impurity concentration of the first inter-layer insulating part being greater than a first-conductivity-type impurity concentration of the first insulating part,
a second-conductivity-type impurity concentration of the first inter-layer insulating part being greater than a second-conductivity-type impurity concentration of the first insulating part.