US 12,294,016 B2
Integrated circuit devices and methods of manufacturing the same
Jungoo Kang, Seoul (KR); Hyunsuk Lee, Suwon-si (KR); Gihee Cho, Yongin-si (KR); and Sanghyuck Ahn, Daegu (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 13, 2024, as Appl. No. 18/439,785.
Application 18/439,785 is a continuation of application No. 18/093,948, filed on Jan. 6, 2023, granted, now 11,929,393.
Application 18/093,948 is a continuation of application No. 16/798,826, filed on Feb. 24, 2020, granted, now 11,569,344, issued on Jan. 31, 2023.
Claims priority of application No. 10-2019-0068805 (KR), filed on Jun. 11, 2019.
Prior Publication US 2024/0186369 A1, Jun. 6, 2024
Int. Cl. H01G 4/12 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/91 (2013.01) [H01G 4/1254 (2013.01); H01L 23/5222 (2013.01); H01L 28/56 (2013.01); H01L 2221/1084 (2013.01); H01L 2221/1089 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing an integrated circuit device, the method comprising:
forming a landing pad over a substrate;
forming a mold structure on the landing pad, the mold structure comprising an opening that exposes a top surface of the landing pad; and
forming a base electrode layer within the opening, the base electrode layer comprising niobium nitride,
wherein the forming of the base electrode layer comprises selectively depositing the base electrode layer on the top surface of the landing pad, relative to a sidewall of the mold structure, using a seed layer in the opening such that the base electrode layer non-conformally extends on the top surface of the landing pad and the sidewall of the mold structure.