US 12,294,011 B2
Image sensor pixel with deep trench isolation structure
Gang Chen, San Jose, CA (US); Yi Zhang, Shanghai (CN); and Fengyun Yan, Beijing (CN)
Assigned to MAGVISION SEMICONDUCTOR (BEIJING) INC., Beijing (CN)
Filed by MAGVISION SEMICONDUCTOR (BEIJING) INC., Beijing (CN)
Filed on Aug. 27, 2021, as Appl. No. 17/459,039.
Claims priority of provisional application 63/226,509, filed on Jul. 28, 2021.
Prior Publication US 2023/0029874 A1, Feb. 2, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/1464 (2013.01); H01L 27/14641 (2013.01); H01L 27/14636 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An image sensor device, comprising:
a substrate;
a plurality of trenches formed in the substrate to define a plurality of pixel regions;
a first photodiode in a first pixel region of the plurality of pixel regions;
a source follower transistor electrically coupled to the first photodiode; and
a select transistor electrically coupled to the source follower transistor and configured to control an electrical connection between an output of the source follower transistor and a bit line associated with the first photodiode, wherein one of the source follower transistor and the select transistor is in a second pixel region of the plurality of pixel regions which is different from the first pixel region, while another one of the source follower transistor and the select transistor is in the first pixel region,
wherein at least one of the source follower transistor and the select transistor includes a gate that has a continuous U-shape completely within a boundary of one of the first pixel region or the second pixel region in a plan view of the image sensor device.