CPC H01L 27/1222 (2013.01) [H01L 27/124 (2013.01)] | 18 Claims |
1. An array substrate, comprising:
a substrate; and
a plurality of transistors disposed on the substrate, wherein each transistor comprises:
an active portion disposed on the substrate, wherein the active portion comprises a semiconductor portion and at least one epitaxial sharp corner portion connected to the semiconductor portion and protruding from the semiconductor portion in a first direction, and in the first direction, the epitaxial sharp corner portion is located on a side of the semiconductor portion;
an insulating portion disposed on the active portion and covering the active portion; and
a first gate disposed on the insulating portion, wherein the first gate is located on the semiconductor portion and the epitaxial sharp corner portion, and the first gate extends along the first direction;
the array substrate further comprising a second gate, wherein the second gate and the first gate are disposed at intervals on the insulating portion, the second gate is located on the semiconductor portion and the epitaxial sharp corner portion, and the second gate extends along the first direction, and wherein the first gate and the second gate are connected in series, independent of each other, or connected in parallel.
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