US 12,294,004 B2
Fin field-effect transistor and method of forming the same
Yi-Chun Chen, Hsinchu (TW); Jih-Jse Lin, Sijhih (TW); and Ryan Chia-Jen Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 21, 2024, as Appl. No. 18/670,223.
Application 18/670,223 is a division of application No. 17/460,049, filed on Aug. 27, 2021, granted, now 12,021,079.
Prior Publication US 2024/0304620 A1, Sep. 12, 2024
Int. Cl. H01L 27/088 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/30608 (2013.01); H01L 21/823431 (2013.01); H01L 29/0649 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for making a semiconductor device, comprising:
forming a first fin structure, a second fin structure, and a third fin structure over a substrate, wherein the first through third fin structure all extend along a first lateral direction, and the second fin structure is disposed between the first and third fin structures;
forming a dummy gate structure over the first through third fin structures, wherein the dummy gate structure extends along a second lateral direction perpendicular to the first lateral direction; and
forming a dielectric cut structure that separates portions of the dummy gate structure overlaying the first and third fin structures, respectively, based on removing the second fin structure;
wherein a portion of the dielectric cut structure has a diamond-like profile extending into the substrate.