US 12,294,003 B2
Integrated circuit structures including backside vias
Nicholas A. Thomson, Hillsboro, OR (US); Kalyan C. Kolluru, Portland, OR (US); Adam Clay Faust, Portland, OR (US); Frank Patrick O'Mahony, Portland, OR (US); Ayan Kar, Portland, OR (US); and Rui Ma, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Aug. 29, 2023, as Appl. No. 18/457,453.
Application 17/526,199 is a division of application No. 16/728,111, filed on Dec. 27, 2019, abandoned.
Application 18/457,453 is a continuation of application No. 17/526,199, filed on Nov. 15, 2021, granted, now 11,791,331.
Prior Publication US 2023/0402449 A1, Dec. 14, 2023
Int. Cl. H01L 21/677 (2006.01); H01L 27/02 (2006.01)
CPC H01L 27/0292 (2013.01) [H01L 27/0255 (2013.01); H01L 27/0288 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) structure, comprising:
a device layer;
a first metallization layer over the device layer;
a second metallization layer under the device layer; and
a conductive via through the device layer, wherein:
the device layer includes:
a first fin having a first semiconductor material and a first conductive material;
a second fin parallel to the first fin, and having a second semiconductor material and a second conductive material, the second semiconductor material being different from the first semiconductor material; and
a first portion of an insulator separating the first fin and the second fin,
the first metallization layer includes a first conductive pathway in conductive contact with at least one of the first fin and the second fin,
the second metallization layer includes:
a second conductive pathway in direct contact with at least one of the first fin and the second fin; and
a second portion of the insulator that is coplanar with the second conductive pathway,
the conductive via is perpendicular to the first fin and the second fin,
the conductive via is in direct contact with the first conductive material and the second conductive material, and
the conductive via is in conductive contact with the first conductive pathway and the second conductive pathway.