US 12,293,996 B2
Semiconductor package including heat dissipation structure
Moon Hee Yi, Suwon-si (KR); Seung Eun Lee, Suwon-si (KR); and Yong Hoon Kim, Suwon-si (KR)
Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si (KR)
Filed on Mar. 31, 2022, as Appl. No. 17/710,512.
Claims priority of application No. 10-2021-0168597 (KR), filed on Nov. 30, 2021.
Prior Publication US 2023/0170339 A1, Jun. 1, 2023
Int. Cl. H01L 25/10 (2006.01); H01L 23/367 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01)
CPC H01L 25/105 (2013.01) [H01L 23/3675 (2013.01); H01L 23/481 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/182 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a first substrate;
a first electronic component disposed on the first substrate;
a second substrate disposed on the first substrate and provided with a cavity disposed in one surface of the second substrate;
a first connection member connecting the first and second substrates to each other;
a heat dissipation structure disposed on the second substrate and spaced apart from the first connection member;
a second connection member disposed on the second substrate; and
a conductive via disposed in the second substrate, spaced apart from the heat dissipation structure, and electrically connecting the second connection member to the first connection member,
wherein the second substrate includes a first region in which the cavity is disposed and a second region connected to the first substrate, and
the heat dissipation structure is disposed in each of the first and second regions of the second substrate.