US 12,293,991 B2
Semiconductor packages and methods of forming same
Chen-Hua Yu, Hsinchu (TW); Chih-Hang Tung, Hsinchu (TW); and Kuo-Chung Yee, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 23, 2022, as Appl. No. 17/751,254.
Application 17/751,254 is a continuation of application No. 16/927,265, filed on Jul. 13, 2020, granted, now 11,342,309.
Application 16/927,265 is a continuation of application No. 16/410,050, filed on May 13, 2019, granted, now 10,714,457, issued on Jul. 14, 2020.
Application 16/410,050 is a continuation of application No. 15/980,541, filed on May 15, 2018, granted, now 10,290,611, issued on May 14, 2019.
Claims priority of provisional application 62/537,736, filed on Jul. 27, 2017.
Prior Publication US 2022/0285323 A1, Sep. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/56 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 24/05 (2013.01); H01L 24/09 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/91 (2013.01); H01L 24/92 (2013.01); H01L 25/50 (2013.01); H01L 21/486 (2013.01); H01L 23/49816 (2013.01); H01L 23/5389 (2013.01); H01L 24/29 (2013.01); H01L 24/80 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 25/105 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08111 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/16058 (2013.01); H01L 2224/16111 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17051 (2013.01); H01L 2224/171 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/27416 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48229 (2013.01); H01L 2224/73103 (2013.01); H01L 2224/73203 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80907 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/9205 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/9212 (2013.01); H01L 2224/94 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/15311 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package comprising:
a first package structure comprising:
a first die having a first active side and a first back-side, the first active side comprising a first bond pad and a first insulating layer;
a second die bonded to the first die, the second die having a second active side and a second back-side, the second active side comprising a second bond pad and a second insulating layer, the second active side of the second die facing the first active side of the first die, the second insulating layer spaced apart from the first insulating layer;
a conductive bonding material bonded to the first bond pad and the second bond pad, the conductive bonding material having a reflow temperature lower than reflow temperatures of the first bond pad and the second bond pad;
a sealing layer on the first active side of the first die and on a sidewall of the second die, the sealing layer sealing a gap between the first insulating layer and the second insulating layer; and
a first encapsulant on the sealing layer.