US 12,293,973 B2
Power semiconductor module
Slavo Kicin, Zürich (CH); Arne Schroeder, Bern (CH); and Farhad Yaghoubi, Baden (CH)
Assigned to Hitachi Energy Ltd, Zurich (CH)
Filed by Hitachi Energy Ltd, Zürich (CH)
Filed on Jun. 10, 2022, as Appl. No. 17/806,337.
Claims priority of application No. 21178802 (EP), filed on Jun. 10, 2021.
Prior Publication US 2022/0399279 A1, Dec. 15, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 23/64 (2006.01); H01L 25/07 (2006.01)
CPC H01L 23/5386 (2013.01) [H01L 23/5385 (2013.01); H01L 23/5387 (2013.01); H01L 23/645 (2013.01); H01L 25/072 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power semiconductor module comprising:
a plurality of semiconductor switches arranged in a plurality of groups, each semiconductor switch having a first terminal and a second terminal having a controlled path therebetween and a control terminal;
a plurality of first group contacts, each first group contact being connected to the first terminals of the semiconductor switches of that group;
a plurality of second group contacts, each second group contact being connected to the second terminals of the semiconductor switches of that group;
a plurality of control group contacts, each control group contact being connected to the control terminals of the semiconductor switches of that group; and
an interconnection bridge connecting the control group contacts and the first group contacts of the plurality of groups, the interconnection bridge comprising a layer structure with a first conductive layer and a second conductive layer being separated by an insulating layer.
 
16. A power semiconductor module comprising:
a first group of semiconductor switches;
a second group of semiconductor switches, each semiconductor switch of the first and second groups having a first terminal and a second terminal having a controlled path therebetween and a control terminal;
a first group contact being connected to the first terminals of the semiconductor switches of the first group;
a second group contact being connected to the first terminals of the semiconductor switches of the second group; a first control group contact being connected to the control terminals of the semiconductor switches of the first group;
a second control group contact being connected to the control terminals of the semiconductor switches of the second group; and
an interconnection bridge connecting the first control group contact to the second control group contact and also connecting the first group contact to the second group contact.
 
20. A power semiconductor module comprising:
a plurality of semiconductor switches arranged in a plurality of groups, each semiconductor switch comprising a wide bandgap semiconductor material and having a first terminal and a second terminal having a controlled path therebetween and a control terminal;
a plurality of first group contacts, each first group contact being connected to the first terminals of the semiconductor switches of that group;
a plurality of second group contacts, each second group contact being connected to the second terminals of the semiconductor switches of that group;
a plurality of control group contacts, each control group contact being connected to the control terminals of the semiconductor switches of that group;
a module first terminal contact connected to the plurality of first group contacts;
a module control contact connected to the plurality of control group contacts;
a resistor connected between the module control contact and at least one of the control group contacts, the resistor having a resistance of less than 2Ω; and
an interconnection bridge connecting the control group contacts and the first group contacts of the plurality of groups, the interconnection bridge comprising a layer structure with a first conductive layer and a second conductive layer being separated by an insulating layer.