US 12,293,971 B2
Semiconductor structure and formation method thereof
Zhongdi Tang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Oct. 21, 2021, as Appl. No. 17/451,667.
Application 17/451,667 is a continuation of application No. PCT/CN2021/108908, filed on Jul. 28, 2021.
Claims priority of application No. 202110003498.7 (CN), filed on Jan. 4, 2021.
Prior Publication US 2022/0216160 A1, Jul. 7, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/53238 (2013.01) [H01L 21/76807 (2013.01); H01L 21/76834 (2013.01); H01L 21/76837 (2013.01); H01L 23/5283 (2013.01); H10B 12/01 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, comprising:
providing a substrate, a dielectric layer on the substrate, the dielectric layer having a trench;
forming a metallic copper layer filling the trench;
forming a contact layer on an upper surface of the metallic copper layer, a material of the contact layer containing cuprous ions; and
forming a barrier layer on an upper surface of the contact layer, a material of the barrier layer containing a same element as the material of the contact layer;
wherein the material of the contact layer is cuprous thiocyanate, and the material of the barrier layer is silicon carbon nitride.