US 12,293,961 B2
Method of manufacture for a cascode semiconductor device
Ricardo Yandoc, Nijmegen (NL); Robert Montgomery, Nijmegen (NL); and Adam Thomas Rosillo, Nijmegen (NL)
Assigned to NEXPERIA B.V., Nijmegen (NL)
Filed by NEXPERIA B.V., Nijmegen (NL)
Filed on Dec. 21, 2022, as Appl. No. 18/086,147.
Application 18/086,147 is a division of application No. 17/204,438, filed on Mar. 17, 2021, granted, now 11,538,744.
Claims priority of application No. 20163929 (EP), filed on Mar. 18, 2020.
Prior Publication US 2023/0123782 A1, Apr. 20, 2023
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49575 (2013.01) [H01L 21/4825 (2013.01); H01L 21/4842 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/49503 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of forming a cascode high electron mobility (HEMT) semiconductor device, the method comprising the steps of:
forming a die pad with an indentation;
applying a first conductive material on the die pad for a HEMT die and for a pillar of a MOSFET source clip of a MOSFET die;
attaching the HEMT die;
applying a second conductive material on top of the HEMT die for a HEMT source and a HEMT drain, wherein the HEMT die at a back thereof diverts a HEMT gate;
attaching the MOSFET die, wherein the MOSFET die has a top at which a MOSFET source and a MOSFET gate are provided, and wherein the MOSFET die has a bottom at which a MOSFET drain is provided, wherein the MOSFET drain is attached to the HEMT source;
applying a third conductive material on the top of the MOSFET die for the MOSFET source and the MOSFET gate;
forming a HEMT drain clip for the HEMT drain, forming the MOSFET source clip for the MOSFET source, and forming a MOSFET gate clip for the MOSFET gate;
connecting the MOSFET source clip to the indentation using a conductive material, wherein the connection between the MOSFET source and the HEMT gate is established;
encapsulating the cascode HEMT semiconductor device;
dambar cutting of the cascode HEMT semiconductor device so that independent leads are formed;
cutting and trimming the independent leads;
forming of gull wing leads; and
singulation of the cascode HEMT semiconductor device.