| CPC H01L 23/467 (2013.01) [H01L 25/0657 (2013.01)] | 15 Claims |

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1. A method of fabricating a three-dimensional (3D) integrated circuit (IC) apparatus, comprising:
forming a 3D IC structure comprising a substrate;
forming a plurality of integrated double-layer microchannels including a first set of integrated double-layer microchannels and a second set of integrated double-layer microchannels, wherein the 3D IC structure includes the plurality of integrated double-layer microchannels and
configuring the plurality of integrated double-layer microchannels in a structural arrangement to optimize a thermal performance for the 3D IC structure, wherein the first set of integrated double-layer microchannels is located immediately below a top of the 3D IC structure and the second set of integrated double-layer microchannels is located immediately above the substrate with the substrate located immediately above a bottom of the 3D IC structure.
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