US 12,293,950 B2
Semiconductor devices and methods of manufacturing semiconductor devices
Shojiro Hanada, Kanagawa (JP); and Shingo Nakamura, Kanagawa (JP)
Assigned to Amkor Technology Japan, Inc., Oita (JP)
Filed by Amkor Technology Japan, Inc., Oita (JP)
Filed on Jun. 17, 2022, as Appl. No. 17/843,789.
Application 17/843,789 is a continuation of application No. 16/720,603, filed on Dec. 19, 2019, granted, now 11,367,664.
Prior Publication US 2022/0384284 A1, Dec. 1, 2022
Int. Cl. H01L 23/10 (2006.01); F16K 99/00 (2006.01); H01L 21/54 (2006.01); H01L 23/00 (2006.01); H01L 23/13 (2006.01); H01L 23/20 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/10 (2013.01) [H01L 21/54 (2013.01); H01L 23/13 (2013.01); H01L 23/20 (2013.01); F16K 99/0005 (2013.01); F16K 99/0023 (2013.01); F16K 99/0032 (2013.01); F16K 99/0036 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 24/48 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48229 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a cavity substrate comprising a base and a sidewall to define a cavity;
an electronic component on a top side of the base in the cavity;
a lid over the cavity and over the sidewall; and
a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity;
wherein the valve comprises a through-hole in the lid between the lid and the sidewall of the cavity substrate.