US 12,293,947 B2
Gap patterning for metal-to-source/drain plugs in a semiconductor device
Yu-Lien Huang, Jhubei (TW); Ching-Feng Fu, Taichung (TW); Huan-Just Lin, Hsinchu (TW); Fu-Sheng Li, Taichung (TW); Tsai-Jung Ho, Changhua County (TW); Bor Chiuan Hsieh, Taoyuan (TW); Guan-Xuan Chen, Taoyuan (TW); and Guan-Ren Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 13, 2023, as Appl. No. 18/507,138.
Application 17/662,752 is a division of application No. 16/878,005, filed on May 19, 2020, granted, now 11,355,399, issued on Jun. 7, 2022.
Application 18/507,138 is a continuation of application No. 17/662,752, filed on May 10, 2022, granted, now 11,842,930.
Prior Publication US 2024/0087960 A1, Mar. 14, 2024
Int. Cl. H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823475 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76837 (2013.01); H01L 21/7684 (2013.01); H01L 21/76895 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a fin field-effect transistor (finFET), the method comprising:
providing a substrate;
forming a fin structure on the substrate;
forming a first source/drain plug and a second source/drain plug on the fin structure;
forming a sacrificial layer on the first source/drain plug and the second source/drain plug;
forming a gap in the sacrificial layer to form a first portion of the sacrificial layer and a second portion of the sacrificial layer;
filling the gap with a dielectric layer, wherein the dielectric layer is in contact with the first portion of the sacrificial layer and the second portion of the sacrificial layer based on filling the gap with the dielectric layer;
removing the first portion of the sacrificial layer and the second portion of the sacrificial layer to create a first opening that exposes the first source/drain plug and a second opening that exposes the second source/drain plug; and
filling the first opening and the second opening with a metal to form a first metal contact and a second metal contact, wherein the dielectric layer is in contact with the first metal contact and the second metal contact based on filling the first opening and the second opening with the metal.