CPC H01L 21/7813 (2013.01) [H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01)] | 9 Claims |
1. A semiconductor chip comprising:
a chip constituent substrate having a first surface and a second surface opposite to the first surface, the chip constituent substrate including a gallium nitride substrate adjacent to the second surface and a layer containing gallium nitride adjacent to the first surface, the chip constituent substrate provided with a semiconductor element, wherein
the semiconductor element is disposed such that components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface,
the chip constituent substrate is formed with a plurality of through holes, as gas vent holes,
each of the through holes penetrates the chip constituent substrate from the first surface to the second surface and defines a first opening adjacent to the first surface and a second opening adjacent to the second surface,
the first opening is larger than the second opening, and
a density of the through holes is 100/cm2 or more.
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