US 12,293,941 B2
Gallium nitride device with field plate structure and method of manufacturing the same
Da-Jun Lin, Kaohsiung (TW); Fu-Yu Tsai, Tainan (TW); Bin-Siang Tsai, Changhua County (TW); and Chung-Yi Chiu, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jun. 9, 2022, as Appl. No. 17/835,983.
Claims priority of application No. 202210558816.0 (CN), filed on May 20, 2022.
Prior Publication US 2023/0377952 A1, Nov. 23, 2023
Int. Cl. H10D 64/00 (2025.01); H01L 21/304 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76813 (2013.01) [H01L 21/304 (2013.01); H01L 21/31056 (2013.01); H01L 21/31144 (2013.01); H10D 64/111 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A gallium nitride device with field plate structure, comprising:
a substrate;
a gate on said substrate;
a passivation layer covering on said gate;
a source and a drain on said substrate and said passivation layer;
a stop layer on said source, said drain and said passivation layer; and
dual-damascene interconnects connecting respectively with said source and said drain, wherein said dual-damascene interconnect is provided with a via portion under said stop layer and a trench portion on said stop layer, and said via portion is connected with said source or said drain, and said trench portion of one of said dual-damascene interconnects extends horizontally toward said drain and overlaps said gate in vertical direction, thereby functioning as a field plate structure for said gallium nitride device;
wherein a first interlayer dielectric (ILD) layer and a second ILD layer is provided respectively above and below said stop layer, and said via portion of said dual-damascene interconnect is in said first ILD layer, and said trench portion of said dual-damascene interconnect is in said second ILD layer, and said via portion and said trench portion is demarcated by said stop layer.