US 12,293,924 B2
Ion exposure method and apparatus
Chia-Cheng Chen, Hsinchu (TW); Wei-Ting Chien, Hsinchu (TW); Liang-Yin Chen, Hsinchu (TW); Huicheng Chang, Tainan (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 17, 2024, as Appl. No. 18/415,411.
Application 18/415,411 is a continuation of application No. 17/855,216, filed on Jun. 30, 2022, granted, now 11,915,942.
Application 17/855,216 is a continuation of application No. 17/205,958, filed on Mar. 18, 2021, granted, now 11,393,695, issued on Jul. 19, 2022.
Prior Publication US 2024/0203749 A1, Jun. 20, 2024
Int. Cl. G03F 7/20 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); H01L 21/32 (2006.01)
CPC H01L 21/32 (2013.01) [G03F 7/70283 (2013.01); H01L 21/027 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first layer over a substrate;
forming a second layer over the first layer;
exposing the second layer to a first ion beam, wherein the substrate is tilted at a tilt angle with respect to an axis of the first ion beam, the tilt angle being measured between the axis of the first ion beam and an upper surface of the substrate, wherein the tilt angle is greater than 0°; and
moving the substrate with respect to the first ion beam while exposing the second layer to the first ion beam, wherein the substrate moves along a scan line, wherein a scan angle between the scan line and a line perpendicular to the axis of the first ion beam, wherein the scan angle is greater than 0°.