US 12,293,920 B2
Structure manufacturing method
Tomokazu Umezawa, Kanagawa (JP)
Assigned to FUJIFILM CORPORATION, Tokyo (JP)
Filed by FUJIFILM CORPORATION, Tokyo (JP)
Filed on Sep. 2, 2022, as Appl. No. 17/929,311.
Application 17/929,311 is a continuation of application No. PCT/JP2021/005059, filed on Feb. 10, 2021.
Claims priority of application No. 2020-055021 (JP), filed on Mar. 25, 2020.
Prior Publication US 2022/0415664 A1, Dec. 29, 2022
Int. Cl. H01L 21/308 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/3086 (2013.01) [H01L 21/3065 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A structure manufacturing method comprising:
a mask formation step of forming a mask that has an opening pattern on a surface of a substrate;
a first etching step of etching the surface of the substrate with the mask to form a recessed portion corresponding to the opening pattern of the mask on the surface of the substrate;
a thin film formation step of forming a thin film including aluminum at least on a bottom surface of the recessed portion in a state where the mask remains;
a hot water treatment step of treating the thin film including aluminum with hot water to change the thin film into a fine recessed and projected layer including alumina hydrate smaller than the recessed portion;
a second etching step of etching the bottom surface of the recessed portion, on which the fine recessed and projected layer is formed, in a state where the mask remains to form a fine recessed and projected structure on the bottom surface of the recessed portion; and
a mask removal step of removing the mask and the fine recessed and projected structure, which remains after the second etching step.