| CPC H01L 21/30625 (2013.01) [B24B 37/34 (2013.01); B24B 53/017 (2013.01)] | 21 Claims |

|
1. A method, comprising:
holding a semiconductor substrate with a chemical mechanical planarization head positioned above a rotating chemical mechanical planarization pad;
performing a chemical mechanical planarization process by placing the semiconductor substrate in contact with the chemical mechanical planarization pad while the chemical mechanical planarization head holds the semiconductor substrate;
conditioning the chemical mechanical planarization pad with a pad conditioner during the chemical mechanical planarization process;
supplying a slurry onto the chemical mechanical planarization pad during the chemical mechanical planarization process with a slurry supply system; and
removing debris from the slurry by performing a charged particle separation process, the charged particle separation process including:
positioning a first electrode and a second electrode in the slurry above the rotating chemical mechanical planarization pad, the first electrode and the second electrode being separate from the chemical mechanical planarization head and the pad conditioner, wherein the first and second electrodes are laterally spaced apart from the chemical mechanical planarization head, wherein the slurry flows between the first and second electrodes during the chemical mechanical planarization process; and
applying a voltage between the first electrode and the second electrode.
|