US 12,293,912 B2
Group III nitride structures and manufacturing methods thereof
Kai Cheng, Suzhou (CN); and Weihua Liu, Suzhou (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Suzhou (CN)
Appl. No. 17/434,543
Filed by ENKRIS SEMICONDUCTOR, INC., Suzhou (CN)
PCT Filed May 12, 2020, PCT No. PCT/CN2020/089836
§ 371(c)(1), (2) Date Aug. 27, 2021,
PCT Pub. No. WO2021/226839, PCT Pub. Date Nov. 18, 2021.
Prior Publication US 2023/0053953 A1, Feb. 23, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 33/00 (2010.01); H10H 20/01 (2025.01)
CPC H01L 21/02458 (2013.01) [H01L 21/0254 (2013.01); H01L 21/02639 (2013.01); H10H 20/0137 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a group-III-nitride structure, comprising:
providing a first group-III-nitride epitaxial layer; forming a patterned first mask layer on the first group-III-nitride epitaxial layer; and etching the first group-III-nitride epitaxial layer to form one or more grooves with the patterned first mask layer as a mask, wherein the patterned first mask layer has one or more suspended sections at the one or more grooves;
forming a second mask layer at least on one or more bottom walls of the one or more grooves; and laterally growing and forming a second group-III-nitride epitaxial layer by performing a first epitaxial growth on the first group-III-nitride epitaxial layer with the second mask layer as a mask, wherein the one or more grooves are filled with the second group-III-nitride epitaxial layer; and
growing and forming a third group-III-nitride epitaxial layer on the second group-III-nitride epitaxial layer and the patterned first mask layer by performing a second epitaxial growth on the second group-III-nitride epitaxial layer.