CPC H01L 21/02126 (2013.01) [C23C 16/36 (2013.01); C23C 16/45553 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/76829 (2013.01)] | 3 Claims |
1. A method of forming a structure, the method comprising the steps of:
using a thermal cyclic deposition process, depositing a layer comprising SiOCN on a surface of a substrate,
wherein a temperature of a susceptor within the reaction chamber during the step of depositing the layer comprising SiOCN is between about 300° C. and about 600° C., and
wherein the thermal cyclic deposition process comprises providing a silicon precursor comprising tetramethyl bis(2,2-dimethylhydrazino) disilane.
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