US 12,293,911 B2
Structure including SiOCN layer and method of forming same
YoungChol Byun, Tempe, AZ (US); Bed Prasad Sharma, Gilbert, AZ (US); Shankar Swaminathan, Phoenix, AZ (US); and Eric James Shero, Phoenix, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 24, 2023, as Appl. No. 18/225,366.
Application 18/225,366 is a continuation of application No. 16/802,920, filed on Feb. 27, 2020, granted, now 11,742,198.
Claims priority of provisional application 62/815,841, filed on Mar. 8, 2019.
Prior Publication US 2023/0369040 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/455 (2006.01); C23C 16/36 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02126 (2013.01) [C23C 16/36 (2013.01); C23C 16/45553 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/76829 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method of forming a structure, the method comprising the steps of:
using a thermal cyclic deposition process, depositing a layer comprising SiOCN on a surface of a substrate,
wherein a temperature of a susceptor within the reaction chamber during the step of depositing the layer comprising SiOCN is between about 300° C. and about 600° C., and
wherein the thermal cyclic deposition process comprises providing a silicon precursor comprising tetramethyl bis(2,2-dimethylhydrazino) disilane.