US 12,293,906 B2
Mn—Ta—W—Cu—O-based sputtering target, and production method therefor
Yuichi Kamori, Tokyo (JP)
Assigned to Dexerials Corporation, Tokyo (JP)
Appl. No. 17/276,627
Filed by Dexerials Corporation, Tokyo (JP)
PCT Filed Sep. 9, 2019, PCT No. PCT/JP2019/035389
§ 371(c)(1), (2) Date Mar. 16, 2021,
PCT Pub. No. WO2020/059560, PCT Pub. Date Mar. 26, 2020.
Claims priority of application No. 2018-174712 (JP), filed on Sep. 19, 2018.
Prior Publication US 2021/0269910 A1, Sep. 2, 2021
Int. Cl. C23C 14/34 (2006.01); C04B 35/495 (2006.01); C22C 1/047 (2023.01); C22C 30/00 (2006.01); G11B 7/243 (2013.01); H01J 37/34 (2006.01)
CPC H01J 37/3429 (2013.01) [C04B 35/495 (2013.01); C22C 1/047 (2023.01); C22C 30/00 (2013.01); C23C 14/3414 (2013.01); H01J 37/3491 (2013.01); C22C 2200/00 (2013.01); G11B 2007/2432 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A Mn—Ta—W—Cu—O-based sputtering target comprising:
Mn, Ta, W, Cu and O in a component composition,
wherein Mn is 5 atom % to 40 atom %, Ta is 10 atom % to 35 atom %, W is 5 atom % to 30 atom %, and Cu is 5 atom % to 30 atom %, and a proportion combining Ta and W is less than 65 atom %, relative to a total of 100 atom % of constituent elements excluding O, and
wherein the sputtering target is a sintered component composition having a relative density of at least 90%, and contains a crystalline phase of Mn4Ta2O9.