US 12,293,905 B2
Cathode unit for magnetron sputtering apparatus and magnetron sputtering apparatus
Toshiya Aoyagi, Kanagawa (JP); Makoto Arai, Kanagawa (JP); and Satoru Takasawa, Kanagawa (JP)
Assigned to ULVAC, INC., Kanagawa (JP)
Appl. No. 17/928,510
Filed by ULVAC, INC., Kanagawa (JP)
PCT Filed Mar. 18, 2022, PCT No. PCT/JP2022/012539
§ 371(c)(1), (2) Date Nov. 29, 2022,
PCT Pub. No. WO2022/244443, PCT Pub. Date Nov. 24, 2022.
Claims priority of application No. 2021-086124 (JP), filed on May 21, 2021.
Prior Publication US 2023/0207295 A1, Jun. 29, 2023
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01)
CPC H01J 37/3405 (2013.01) [C23C 14/3407 (2013.01); C23C 14/35 (2013.01); H01J 37/3455 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A cathode unit for a magnetron sputtering apparatus, comprising first and second magnet units that are disposed on a side opposed to a sputtering surface of a target set in a posture facing an inside of a vacuum chamber and are respectively driven to rotate around an axis extending in a direction orthogonal to the sputtering surface, wherein
the first magnet unit having a first pair of magnets is configured to cause a first leakage magnetic field, in which a position where a vertical component of the first leakage magnetic field becomes zero forms a closed loop, to act on a first space in front of the sputtering surface including a center of the target inward,
the second magnet unit having a second pair of magnets is configured to cause a second leakage magnetic field, in which a position where a vertical component of the second leakage magnetic field becomes zero forms a closed loop, to act locally unevenly from the target center on a second space in front of the sputtering surface located between the target center and an outer edge of the target, and also to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field,
the cathode unit further comprising a driving unit configured to move the second magnet unit to a position close to the sputtering surface of the target, and configured to move the first magnet unit and the second magnet unit to a position so that magnetic field interference does not occur, and
the second magnet unit is provided via a support arm extending contractible in a radial direction from the axis.