CPC H01J 37/32715 (2013.01) [H01J 37/32082 (2013.01); H01J 37/32642 (2013.01); H02N 13/00 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01)] | 12 Claims |
1. An apparatus for plasma processing comprising:
a chamber;
a first bias power source configured to generate a first electrical bias;
a second bias power source configured to generate a second electrical bias;
a support in the chamber, the support including:
a first region configured to hold a substrate placed thereon;
a second region surrounding the first region and configured to hold an edge ring placed thereon;
a first electrode in the first region, electrically coupled with the first bias power source, and configured to receive the first electrical bias from the first bias power source; and
a second electrode in the second region, electrically coupled with the second bias power source, and configured to receive the second electrical bias from the second bias power source;
a first electrical path connected between the first bias power source and the first electrode;
a second electrical path connected between the second bias power source and the second electrode; and
a capacitor having one end connected to the first electrical path between the first bias power source and the first electrode and an other end connected to the second electrical path between the second bias power source and the second electrode.
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