US 12,293,901 B2
Substrate processing apparatus including shower head and edge ring and related methods of manufacturing semiconductor devices
Woorim Lee, Hwaseong-si (KR); Sunggil Kang, Hwaseong-si (KR); Inseong Kim, Hwaseong-si (KR); Gonjun Kim, Suwon-si (KR); and Younghoo Kim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 2, 2022, as Appl. No. 17/685,097.
Claims priority of application No. 10-2021-0033719 (KR), filed on Mar. 16, 2021.
Prior Publication US 2022/0301827 A1, Sep. 22, 2022
Int. Cl. H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32495 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01J 37/32743 (2013.01); H01L 21/6833 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device comprising:
depositing a chamber protective layer in a chamber;
supplying a first purge gas to an interior of the chamber;
transferring a substrate to the interior of the chamber, the substrate being disposed on an electrostatic chuck and surrounded by an edge ring of the electrostatic chuck;
processing the substrate;
supplying a second purge gas to the interior of the chamber;
transferring the substrate to outside of the chamber;
wherein the surface roughness Ra of the edge ring is 0.05 μm or less,
wherein a ratio of an edge gas flow rate of gas supplied to an edge of the substrate and the edge ring to a central gas flow rate of gas supplied to a central portion of the substrate when the processing the substrate is in the range of 0.05 to 19,
wherein the ratio of the edge gas flow rate to the central gas flow rate is more than 1 when supplying the second purge gas.