US 12,293,900 B2
Apparatus and method for film formation
Satyanarayan Barik, Holroyd (AU); Marie-Pierre Francoise Wintrebert Ep Fouquet, Silverwater (AU); and Ian Mann, Silverwater (AU)
Assigned to GALLIUM ENTERPRISES PTY LTD, New South Wales (AU)
Filed by Gallium Enterprises Pty Ltd, Silverwater (AU)
Filed on Feb. 9, 2021, as Appl. No. 17/171,468.
Application 17/171,468 is a division of application No. 14/413,587, abandoned, previously published as PCT/AU2013/000786, filed on Jul. 15, 2013.
Claims priority of application No. 2012903023 (AU), filed on Jul. 13, 2012; and application No. 2012903455 (AU), filed on Aug. 10, 2012.
Prior Publication US 2021/0166913 A1, Jun. 3, 2021
Int. Cl. C23C 16/00 (2006.01); C01B 21/06 (2006.01); C23C 16/30 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01); C23C 16/513 (2006.01); H01B 1/06 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01)
CPC H01J 37/3244 (2013.01) [C01B 21/0632 (2013.01); C23C 16/303 (2013.01); C23C 16/452 (2013.01); C23C 16/455 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/513 (2013.01); H01B 1/06 (2013.01); H01J 37/32357 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 29/2003 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of forming a thin film on a substrate by RPCVD including the steps of:
a. introducing a nitrogen plasma through a nitrogen plasma inlet into a first deposition zone of a growth chamber;
b. introducing a Group IIIA metal alkyl organic reagent through a Group IIIA reagent inlet into a second deposition zone of the growth chamber, the second deposition zone being substantially isolated from the first deposition zone;
c. introducing ammonia through an additional reagent inlet into the second deposition zone such that the ammonia and the Group IIIA metal alkyl organic reagent mix prior to deposition; and
d. moving the substrate between the first and second deposition zones, to thereby form the thin film on the substrate,
wherein the nitrogen plasma introduced into the first deposition zone provides substantially all active nitrogen required for formation of the thin film on the substrate, and
wherein the substrate is a 7×2″ wafer arrangement and the ammonia is introduced at a relative flow rate of between about 160 to 250 sccm for this 7×2″ wafer arrangement in the growth chamber.